sot-363 1 UMH14N dual digital transistors (npn+ npn) features two dtc144t chips in a package. marking: h14 equivalent circuit absolute maximum ratings (ta=25 ) electrical characteristics (ta=25 ) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =50 a, i e =0 50 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =50 a, i c =0 5 v collector cut-off current i cbo v cb =50v, i e =0 500 na emitter cut-off current i ebo v eb =4v, i c =0 500 na dc current transfer ration h fe v ce =5v, i c =1ma 100 600 collector-emitter saturation voltage v ce(sat) i c =5ma, i b =0.5ma 0.3 v transition frequency f t v ce =10v, i c =5ma, f =100mhz 250 mhz input resistance r 1 32.9 61.1 k ? symbol parameter value units v cbo collector-base voltage 50 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current 100 ma p d power dissipation 150 mw t j junction temperature 150 t stg storage temperature -55~+150 www.htsemi.com semiconductor jinyu 1 date:2011/ 05
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